Sapphire Wafer C-Plane to M 1°Off, 99.999% Al₂O₃, Diameter 2"/3"/4"/6"/8", Custom Orientation
This ultra-high-purity sapphire wafer features a C-plane to M-axis 1° off-cut orientation with 99.999% (5N) Al₂O₃ purity, engineered for advanced epitaxial growth and specialized semiconductor applications. Available in standard diameters (2" to 8") with customizable orientations and thicknesses, it delivers exceptional crystallographic precision, ultra-low defect density, and superior thermal/chemical stability. The 1° off-cut toward the M-axis optimizes epitaxial film quality for GaN, AlN, and ZnO-based devices, making it ideal for high-performance LEDs, laser diodes, power electronics, and SAW/BAW filters.
Key Features of Sapphire Wafer
Precision Off-Cut Orientation:
C-plane to M-axis 1° ±0.1° off-cut, reducing step-bunching defects and improving epitaxial layer uniformity.
Custom off-cut angles (0.2°–5°) available for specialized applications.
Ultra-High Purity (5N Al₂O₃):
99.999% purity with trace impurities (Fe, Ti, Si) <5 ppm, ensuring minimal electrical/optical losses.
Customizable Dimensions & Orientations:
Diameters: 2", 3", 4", 6", 8"
Thickness: 100 µm to 1,000 µm (±5 µm tolerance).
Alternative orientations: A-plane (1120), R-plane (1102), or mixed cuts upon request.
Superior Surface Quality:
Epi-ready polish: Ra <0.5 nm (front side) for defect-free thin-film deposition.
Double-side polishing (DSP): Ra <0.3 nm for optical applications.
Exceptional Material Properties:
Thermal stability: Melting point ~2,050°C, suitable for MOCVD/MBE processes.
Optical transparency: >85% transmission (UV to mid-IR: 250–5,000 nm).
Mechanical robustness: 9 Mohs hardness, resistant to chemical/abrasive wear.
Applications of Sapphire Wafer
Optoelectronics:
GaN-based LEDs/Laser Diodes: Blue/UV LEDs, micro-LEDs, and edge-emitting lasers.
Laser windows: High-power CO₂ and excimer laser components.
Power & RF Electronics:
HEMTs (High-Electron-Mobility Transistors): 5G/6G power amplifiers and radar systems.
SAW/BAW Filters: M-plane orientation enhances piezoelectric performance.
Industrial & Defense:
IR windows and missile domes: High transparency in extreme environments.
Sapphire sensors: Corrosion-resistant covers for harsh conditions.
Quantum & Research Technologies:
Substrates for superconducting qubits (quantum computing).
Nonlinear optics: SPDC crystals for quantum entanglement studies.
Semiconductor & MEMS:
SOI (Silicon-on-Insulator) wafers for advanced ICs.
MEMS resonators: High-frequency stability with M-plane cuts.
Specifications
| Parameter | Value |
| Diameter | 2", 3", 4", 6", 8" (±0.1 mm) |
| Thickness | 100–1,500 µm (±5 µm) |
| Orientation | C-plane to M 1° ±0.1° off |
| Purity | 99.999% (5N Al₂O₃) |
| Surface Roughness (Ra) | <0.5 nm (epi-ready) |
| Dislocation Density | <500 cm⁻² |
| TTV (Total Thickness Variation) | <10 µm |
| Bow/Warp | <15 µm |
| Optical Transparency | 250–5,000 nm (>85%) |
Q&A
Q1: Why choose a C-plane to M 1° off-cut for GaN epitaxy?
A1: The M-axis off-cut improves adatom mobility during growth, reducing defects and enhancing uniformity in GaN films for high-power devices.
Q2: Can I request other off-cut directions (e.g., A-axis)?
A2: Yes. Custom orientations (A-plane, R-plane, or mixed cuts) are available with ±0.1° tolerance.
Q3: What’s the advantage of DSP for laser applications?
A3: DSP provides <0.3 nm roughness on both sides, reducing scatter losses for high-power laser optics.
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Sapphire Wafer C-Plane to M 1°off 99.999% Al2O3 Dia 2"3"4"6"8" customize orientation Images
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